In(AsN) mid-infrared emission enhanced by rapid thermal annealing
نویسندگان
چکیده
منابع مشابه
Simulations of mid infrared emission of InAsN semiconductors
This paper delivers an efficient approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are in good agreement with recent experimental data.
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ژورنال
عنوان ژورنال: Infrared Physics & Technology
سال: 2015
ISSN: 1350-4495
DOI: 10.1016/j.infrared.2014.11.016